Si Photo Diode
CP0174AL is a photodiode for optical power monitoring from 400nm to 1000nm.
The photo diode packaged in a 2.2 x 1.22 x 1.00 [mm] surface mount COB-2 package is ideal for various small optical units such as pico projectors.
Package | 2.2mm×1.22mm×1.0mm COB-2PIN |
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Sensitivity | 0.26A/W @405nm,0.44A/W@700nm |
Sensibility wavelength range | 400nm - 1000nm |
Photosensitive area | 0.7mm×0.7mm |
Solder reflow | compatible |
Halogen free | compatible |
Pb free | RoHS compatible |
* Optical Power Monitoring
* Laser Auto Power Control
* Laser/LED Based Projectors or Projection TV
Under mass production
Si-Avalanche Photodiode
Si avalanche photodiode (Si-APD) for optical detection of λ=635nm laser used in laser distance meters, etc. The surface-mount COB package and low bias support make it suitable for portable devices.
These Si-APDs are easy to use due to small temperature variation of breakdown voltage and variation of breakdown voltage.
Photodetector diameter |
200 μm Custom shapes and dimensions available |
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Breakdown voltage (typ.) |
100 V |
Breakdown voltage range |
85 V〜115 V |
Temperature coefficient of breakdown voltage |
0.37 V/℃ |
635nm Sensitivity @ M=100 |
34.4 A/W |
Dark current @ M=100 |
0.08 nA |
Pin-to-Pin Capacitance |
0.64 pF |
Wavelength range |
400 nm-1100 nm |